 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Shantou Huashan Electronic Devices Co.,Ltd. HTP8A60 NON INSULATED TYPE TRIAC (TO-220 PACKAGE) Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=8A) * High Commutation dv/dt General Description The Triac HTP8A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maximum Ratings Ta=25ae(c) Tstg Tj PGM VDRM IT RMS(c) Storage Temperature- - - - - - - - - - - - -40~125ae -40~125ae 5W 600V 8A 10V 2.0A - 80/88A Operating Junction Temperature Peak Gate Power Dissipation- Repetitive Peak Off-State Voltage- R.M.S On-State Current Ta=105ae(c) ---------------------- VGM IGM Peak Gate Voltage - - Peak Gate Current--- -------------------- ITSM Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) - Electrical Characteristics Ta=25ae(c) Symbol IDRM Items Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Currentn(c) Gate Trigger Currento(c) Gate Trigger Currento(c) Gate Trigger Voltagen(c) Gate Trigger Voltageo(c) Gate Trigger Voltageo(c) Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Holding Current Thermal Resistance 0.2 10 Min. Typ. Max. 2.0 Unit mA Conditions VD=VDRM, Single Phase,Half Wave, TJ=125ae IT=12A, Inst. Measurement VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm TJ=125ae TJ=125ae ,VD=1/2VDRM ,VD=2/3VDRM VTM I+GT1 I- GT1 I-GT3 V+ GT1 V- GT1 V- GT3 VGD (dv/dt)c 1.4 30 30 30 1.5 1.5 1.5 V mA mA mA V V V V V/S (di/dt)c=-4A/ms IH Rth(j-c) 15 2.0 ae mA /W Junction to case Shantou Huashan Electronic Devices Co.,Ltd. HTP8A60 Fig 2. On-State Voltage Performance Curves Fig 1. Gate Characteristics Voltage (V) 10 1 Gate 0.1 101 102 103 Gate Current (mA) On-state Current [A] On-State Voltage [V] Fig 3. Gate Trigger Voltage vs. Junction Temperature Fig 4. On State Current vs. Maximum Power Dissipation Junction Temperature [ae ] Fig 5. On State Current vs. Allowable Case Temperature Power Dissipation [W] RMS On-State Current [A] Fig 6. Surge On-State Current Rating ( Non-Repetitive ) C] Surge On-state Current [A] 100 Allowable Case Temp. [a 101 102 RMS On-State Current [A] Time Cycles(c) Shantou Huashan Electronic Devices Co.,Ltd. HTP8A60 Fig 8. Transient Thermal Impedance Fig 7. Gate Trigger Current vs. Junction Temperature 10 Transient Thermal /W ] Impedance [ae 1 0.1 10-2 10-1 100 101 102 Junction Temperature [ae ] Time sec(c) Fig 9. Gate Trigger Characteristics Test Circuit 10| 10| 10| Test Proceduren Test Procedureo Test Procedureo |
Price & Availability of HTP8A60
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |